Werner Wegscheider: Katalogdaten im Herbstsemester 2017 |
Name | Herr Prof. Dr. Werner Wegscheider |
Lehrgebiet | Festkörperphysik |
Adresse | Laboratorium für Festkörperphysik ETH Zürich, HPF E 7 Otto-Stern-Weg 1 8093 Zürich SWITZERLAND |
Telefon | +41 44 633 77 40 |
werner.wegscheider@phys.ethz.ch | |
URL | https://mbe.ethz.ch |
Departement | Physik |
Beziehung | Ordentlicher Professor |
Nummer | Titel | ECTS | Umfang | Dozierende | |
---|---|---|---|---|---|
402-0101-00L | The Zurich Physics Colloquium | 0 KP | 1K | R. Renner, G. Aeppli, C. Anastasiou, N. Beisert, G. Blatter, S. Cantalupo, C. Degen, G. Dissertori, K. Ensslin, T. Esslinger, J. Faist, T. K. Gehrmann, G. M. Graf, R. Grange, J. Home, S. Huber, A. Imamoglu, P. Jetzer, S. Johnson, U. Keller, K. S. Kirch, S. Lilly, L. M. Mayer, J. Mesot, B. Moore, D. Pescia, A. Refregier, A. Rubbia, T. C. Schulthess, M. Sigrist, A. Vaterlaus, R. Wallny, A. Wallraff, W. Wegscheider, A. Zheludev, O. Zilberberg | |
Kurzbeschreibung | Research colloquium | ||||
Lernziel | |||||
402-0317-00L | Semiconductor Materials: Fundamentals and Fabrication | 6 KP | 2V + 1U | S. Schön, W. Wegscheider | |
Kurzbeschreibung | This course gives an introduction into the fundamentals of semiconductor materials. The main focus is on state-of-the-art fabrication and characterization methods. The course will be continued in the spring term with a focus on applications. | ||||
Lernziel | Basic knowledge of semiconductor physics and technology. Application of this knowledge for state-of-the-art semiconductor device processing | ||||
Inhalt | 1. Fundamentals of Solid State Physics 1.1 Semiconductor materials 1.2 Band structures 1.3 Carrier statistics in intrinsic and doped semiconductors 1.4 p-n junctions 1.5 Low-dimensional structures 2. Bulk Material growth of Semiconductors 2.1 Czochalski method 2.2 Floating zone method 2.3 High pressure synthesis 3. Semiconductor Epitaxy 3.1 Fundamentals of Epitaxy 3.2 Molecular Beam Epitaxy (MBE) 3.3 Metal-Organic Chemical Vapor Deposition (MOCVD) 3.4 Liquid Phase Epitaxy (LPE) 4. In situ characterization 4.1 Pressure and temperature 4.2 Reflectometry 4.3 Ellipsometry and RAS 4.4 LEED, AES, XPS 4.5 STM, AFM 5. The invention of the transistor - Christmas lecture | ||||
Skript | https://moodle-app2.let.ethz.ch/course/view.php?id=3481 | ||||
Voraussetzungen / Besonderes | The "central element" of this lecture is a short presentation of a research paper complementing the lecture topics. Several topics and corresponding papers will be offered on the moodle page of this lecture. |