Ulrike Grossner: Catalogue data in Spring Semester 2020

Name Prof. Dr. Ulrike Grossner
FieldPower Semiconductors
Address
Professur für Leistungshalbleiter
ETH Zürich, ETL F 26
Physikstrasse 3
8092 Zürich
SWITZERLAND
Telephone+41 44 632 28 07
Fax+41 44 632 12 02
E-mailulrike.grossner@ethz.ch
DepartmentInformation Technology and Electrical Engineering
RelationshipFull Professor

NumberTitleECTSHoursLecturers
227-0156-00LPower Semiconductors6 credits4GU. Grossner
AbstractPower semiconductor devices are the core of today's energy efficient electronics. In this course, based on semiconductor physics, an understanding of the functionality of modern power devices is developed. Elements of power rectifiers and switches are introduced; device concepts for PiN diodes, IGBTs, and power MOSFETs, are discussed. Apart from silicon, wide bandgap semiconductors are considered.
ObjectiveThe goal of this course is developing an understanding of modern power device concepts. After following the course, the student will be able to choose a power device for an application, know the basic functionality, and is able to describe the performance and reliability related building blocks of the device design. Furthermore, the student will have an understanding of current and future developments in power devices.
ContentBasic semiconductor device physics is revisited. After defining requirements from typical applications, the key building blocks - especially active area and termination - of power devices are introduced. Based on these building blocks, device concepts are derived. Introducing unipolar as well as bipolar conduction is increasing the application space for power devices. Rectifiers, such as Schottky barrier and PiN diodes, and switches, such as IGBTs and power MOSFETs are discussed in detail. For each device concept, a tradeoff analysis for performance and reliability based on the layout of the building blocks is discussed.
Apart from silicon, wide bandgap semiconductors play an increasing role for highly efficient power electronic devices. This development is taken into account by discussing the specific advantages and challenges in current wide bandgap based devices.
Lecture notesWill be distributed at lectures.
LiteratureThe course follows a collection of different books; more details are being listed in the script.
Prerequisites / NoticeVorlesungen Halbleiterbauelemente, Leistungselektronik
227-0250-00LPower Semiconductor Packaging6 credits2V + 2UU. Grossner, I. Kovacevic
AbstractPower semiconductor devices are the core of today's energy efficient electronics. However, without adequate integration into power electronic systems, they remain useless. This is achieved by providing application-tailored modules. The development of power modules is reviewed from basic design and material considerations, with special emphasis on simulation and characterization techniques.
ObjectiveThe goal of this course is developing an understanding of modern power module concepts, from materials to design and simulation. After following the course, the student will know the basic functionality of a power module, and is able to describe the performance and reliability related building blocks of the module design. Furthermore, the student will have an understanding of current and future developments in power packaging.
Lecture notesWill be distributed at lectures and be made available at ILIAS.
LiteratureThe course follows a collection of different books; more details are being listed in the script.
Prerequisites / NoticeIdeally, students have successfully attended "Power Semiconductor" (227-0156-00).