Alexandros Emboras: Katalogdaten im Frühjahrssemester 2018

NameHerr PD Dr. Alexandros Emboras
LehrgebietNeuromorphic Computing: from Devices to Applications
Adresse
Institut für Integrierte Systeme
ETH Zürich, ETZ J 76.1
Gloriastrasse 35
8092 Zürich
SWITZERLAND
Telefon+41 44 632 78 65
E-Mailemborasa@ethz.ch
DepartementInformationstechnologie und Elektrotechnik
BeziehungPrivatdozent

NummerTitelECTSUmfangDozierende
227-0159-00LSemiconductor Devices: Quantum Transport at the Nanoscale Information 6 KP2V + 2UM. Luisier, A. Emboras
KurzbeschreibungThis class offers an introduction into quantum transport theory, a rigorous approach to electron transport at the nanoscale. It covers different topics such as bandstructure, Wave Function and Non-equilibrium Green's Function formalisms, and electron interactions with their environment. Matlab exercises accompany the lectures where students learn how to develop their own transport simulator.
LernzielThe continuous scaling of electronic devices has given rise to structures whose dimensions do not exceed a few atomic layers. At this size, electrons do not behave as particle any more, but as propagating waves and the classical representation of electron transport as the sum of drift-diffusion processes fails. The purpose of this class is to explore and understand the displacement of electrons through nanoscale device structures based on state-of-the-art quantum transport methods and to get familiar with the underlying equations by developing his own nanoelectronic device simulator.
InhaltThe following topics will be addressed:
- Introduction to quantum transport modeling
- Bandstructure representation and effective mass approximation
- Open vs closed boundary conditions to the Schrödinger equation
- Comparison of the Wave Function and Non-equilibrium Green's Function formalisms as solution to the Schrödinger equation
- Self-consistent Schödinger-Poisson simulations
- Quantum transport simulations of resonant tunneling diodes and quantum well nano-transistors
- Top-of-the-barrier simulation approach to nano-transistor
- Electron interactions with their environment (phonon, roughness, impurity,...)
- Multi-band transport models
SkriptLecture slides are distributed every week and can be found at
https://iis-students.ee.ethz.ch/lectures/quantum-transport-in-nanoscale-devices/
LiteraturRecommended textbook: "Electronic Transport in Mesoscopic Systems", Supriyo Datta, Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, 1997
Voraussetzungen / BesonderesBasic knowledge of semiconductor device physics and quantum mechanics
227-0303-00LAdvanced Photonics6 KP2V + 1U + 1AA. Dorodnyy, A. Emboras, M. Burla, P. Ma, T. Watanabe
KurzbeschreibungLecture gives comprehensive insight into nano-scale photonic devices, physical fundamentals behind, simulation techniques and an overview of the design and fabrication. Following applications of nano-scale photonic structures are discussed: waveguides, fiber couplers, light sources, modulators and detectors, photovoltaic cells, atomic-level devices, integrated microwave/optical devices.
LernzielGeneral training in advanced photonic device design with an overview of simulation, fabrication, and characterization techniques. Hands-on experience with photonic and optoelectronic device modeling and simulation.
SkriptThe presentation and the lecture notes will be provided every week.
LiteraturProf. Thomas Inn: Semiconductor Nanostructures, Oxford University Press
Prof. Peter Wurfel: Physics of Solar Cells, Wiley
Prof. H. Gatzen, Prof. Volker Saile, Prof. Juerg Leuthold: Micro and Nano Fabrication, Springer
Voraussetzungen / BesonderesBasic knowledge of semiconductor physics, physics of the electromagnetic filed and thermodynamics.