227-0158-00L Semiconductor Devices: Transport Theory and Monte Carlo Simulation
|Semester||Spring Semester 2019|
|Periodicity||yearly recurring course|
|Course||Does not take place this semester.|
|Language of instruction||English|
|Abstract||The first part deals with semiconductor transport theory including the necessary quantum mechanics. |
In the second part, the Boltzmann equation is solved with the stochastic methods of Monte Carlo simulation.
The exercises address also TCAD simulations of MOSFETs. Thus the topics include theoretical physics,
numerics and practical applications.
|Objective||On the one hand, the link between microscopic physics and its concrete application in device simulation is established; on the other hand, emphasis is also laid on the presentation of the numerical techniques involved.|
|Content||Quantum theoretical foundations I (state vectors, Schroedinger and Heisenberg picture). Band structure (Bloch theorem, one dimensional periodic potential, density of states). Pseudopotential theory (crystal symmetries, reciprocal lattice, Brillouin zone).|
Semiclassical transport theory (Boltzmann transport equation (BTE), scattering processes, linear transport).<br>
Monte Carlo method (Monte Carlo simulation as solution method of the BTE, algorithm, expectation values).<br>
Implementational aspects of the Monte Carlo algorithm (discretization of the Brillouin zone, self-scattering according to Rees, acceptance- rejection method etc.). Bulk Monte Carlo simulation (velocity-field characteristics, particle generation, energy distributions, transport parameters). Monte Carlo device simulation (ohmic boundary conditions, MOSFET simulation).
Quantum theoretical foundations II (limits of semiclassical transport theory, quantum mechanical derivation of the BTE, Markov-Limes).
|Lecture notes||Lecture notes (in German)|