227-0620-00L  Characterization of the Electronic Properties of Materials for Semiconductor Devices

SemesterHerbstsemester 2014
Dozierende
Periodizität2-jährlich wiederkehrende Veranstaltung
LehrveranstaltungFindet dieses Semester nicht statt.
LehrspracheEnglisch


KurzbeschreibungThis lecture provides theoretical and experimental knowledge on the techniques for the characterization of the main electronic properties of semiconductors and thin film materials used in microelectronics, with special focus on silicon.
LernzielThe characterization of the electronic properties of semiconductor and related materials is fundamental to manufacture integrated devices, which fulfill the required specifications. By this lecture, the students shall get acquainted with the main electrical characterization techniques of the electronic properties of semiconductors and thin film materials used in microelectronics, as well as with their physical principles. This knowledge is intended to provide the future engineer with the theoretical background and experimental tools for process control in semiconductor manufacturing, parameter extraction in device simulation, and design of dependable devices.
InhaltThis lecture consists of a theoretical part (80%) and of laboratory exercises and demonstrations (20%). In the first section of the lecture, methods and procedures are presented for the experimental characterization of relevant electronic parameters in the bare semiconductor (mainly silicon), like resistivity, carrier and doping density, contact resistance, and Schottky barriers, defect density, carrier lifetime, mobility. The second section deals with techniques involving basic structures and devices (contact chains, MIS capacitors, diodes, gated diodes, BJT, MOSFET) for the characterization of atomic transport, mechanical stress, dielectric thickness, impact ionization, channel mobility, instabilities, defect formation at interfaces and in thin film dielectrics, carrier transport and trapping in thin film dielectrics, quasi-static and dynamic device characteristics. The list of the covered methods includes among others probing, Kelvin measurements, VanderPauw technique, Hall spectroscopy, SIMS, Raman spectroscopy, spreading resistance, scanning probe techniques, static/high-speed I-V, static/high-frequency C-V, open circuit voltage decay, carrier recombination techniques, Zerbst techniques, deep level transient spectroscopy, split C-V, charge pumping, and inverse modeling techniques using TCAD. All methods are presented in conjunction with the proper test structures. During the laboratory activities, a selection of the experimental techniques discussed in the lecture are demonstrated on the base of realistic examples.
SkriptHandouts to the lecture (approx. 200 pp.)
LiteraturSchroeder D.K, Semiconductor Material and Device Characterization, Wiley Ed.
F. Balestra Ed., Nanoscale CMOS : innovative materials, modeling and characterization, ISTE