227-0618-00L  Modeling, Characterization and Reliability of Power Semiconductors

SemesterHerbstsemester 2017
DozierendeM. P. M. Ciappa
Periodizitätjährlich wiederkehrende Veranstaltung
LehrspracheEnglisch


KurzbeschreibungThis lecture provides theoretical and experimental knowledge on the techniques for the characterization and numerical modeling of power semiconductors, as well on the related built-in reliability strategies.
LernzielThe students shall get acquainted with the most important concepts and techniques for characterization, numerical modeling and built-in reliability of modern power semiconductor devices. This knowledge is intended to provide the future engineer with the theoretical background and tools for the design of dependable power devices and systems.
InhaltThis lecture consists of a theoretical part (50%) and of laboratory exercises and demonstrations (50%).
The theoretical part covers the basic techniques and procedures for characterization, modeling and built-in reliability of modern power semiconductor devices with special attention to MOS and IGBT. The starting part on technology provides an overview on the main device families and includes a review of the most relevant application-oriented aspects of the device physics, thermal management, and packaging. The second section deals with the basic experimental characterization techniques for the definition of the semiconductor material properties, electrical characteristics, safe operating area, and junction temperature of the devices. The following section introduces the basic principles for electrical, thermal, and electro-thermal simulation of power semiconductors by Technology Computed Aided Design (TCAD) and compact modeling. Finally, procedures are methods are presented to implement efficient built-in reliability programs targeted on power semiconductors. They include failure physics, dedicated failure analysis techniques, accelerated testing, defect screening, and lifetime modeling.
During the laboratory activities, selections of the experimental techniques presented in the lecture are demonstrated on the base of realistic examples. Furthermore, schematic power devices will be simulated by the students with advanced TCAD tools and circuit simulators.
SkriptHandouts to the lecture (approx. 250 pp.)
LiteraturEiichi Ohno: "Introduction to Power Electronics"
B. Murari et al.: "Smart Power ICs"
B. J. Baliga: "Physics Modern Power Devices"
S. K. Ghandi: "Semiconductor Power Devices"