227-0157-00L  Semiconductor Devices: Physical Bases and Simulation

SemesterAutumn Semester 2017
LecturersA. Schenk
Periodicityyearly recurring course
Language of instructionEnglish


AbstractThe course addresses the physical principles of modern semiconductor devices and the foundations of their modeling and numerical simulation. Necessary basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided. Computer simulations of the most important devices and of interesting physical effects supplement the lectures.
ObjectiveThe course aims at the understanding of the principle physics of modern semiconductor devices, of the foundations in the physical modeling of transport and its numerical simulation. During the course also basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided.
ContentThe main topics are: transport models for semiconductor devices (quantum transport, Boltzmann equation, drift-diffusion model, hydrodynamic model), physical characterization of silicon (intrinsic properties, scattering processes), mobility of cold and hot carriers, recombination (Shockley-Read-Hall statistics, Auger recombination), impact ionization, metal-semiconductor contact, metal-insulator-semiconductor structure, and heterojunctions.
The exercises are focussed on the theory and the basic understanding of the operation of special devices, as single-electron transistor, resonant tunneling diode, pn-diode, bipolar transistor, MOSFET, and laser. Numerical simulations of such devices are performed with an advanced simulation package (Sentaurus-Synopsys). This enables to understand the physical effects by means of computer experiments.
Lecture notesThe script (in book style) can be downloaded from: https://iis-students.ee.ethz.ch/lectures/
LiteratureThe script (in book style) is sufficient. Further reading will be recommended in the lecture.
Prerequisites / NoticeQualifications: Physics I+II, Semiconductor devices (4. semester).