Silke Schön: Katalogdaten im Frühjahrssemester 2019 |
Name | Frau PD Dr. Silke Schön |
Namensvarianten | Silke Schön S Schoen S Schon S Schön |
Lehrgebiet | Experimentalphysik |
Adresse | FIRST-Lab ETH Zürich, HCI D 121 Vladimir-Prelog-Weg 1-5/10 8093 Zürich SWITZERLAND |
Telefon | +41 44 633 21 39 |
schoen@first.ethz.ch | |
Departement | Physik |
Beziehung | Privatdozentin |
Nummer | Titel | ECTS | Umfang | Dozierende | |
---|---|---|---|---|---|
327-6100-00L | Materials Colloquium | 0 KP | R. Grange, H. Galinski, C. Moutafis, C. Padeste, S. Schön, F. Stellacci, weitere Dozierende | ||
Kurzbeschreibung | The Materials Colloquium is a platform for PhD students, postdoctoral researchers, group leaders, senior scientists, and professors to present their own and their group’s research to their colleagues. The apero following the colloquium has the purpose to stimulate discussions and to promote networking in a relaxed, more informal environment. The Colloquium is open to all who are interested. | ||||
Lernziel | Learn about recent research in the field of materials science. | ||||
Inhalt | https://sam.ethz.ch/index.php/d-matl-seminar-2/materials-science-colloquium-2019/ | ||||
402-0318-00L | Semiconductor Materials: Characterization, Processing and Devices | 6 KP | 2V + 1U | S. Schön, W. Wegscheider | |
Kurzbeschreibung | This course gives an introduction into the fundamentals of semiconductor materials. The main focus in this semester is on state-of-the-art characterization, semiconductor processing and devices. | ||||
Lernziel | Basic knowledge of semiconductor physics and technology. Application of this knowledge for state-of-the-art semiconductor device processing | ||||
Inhalt | 1. Material characterization: structural and chemical methods 1.1 X-ray diffraction methods (Powder diffraction, HRXRD, XRR, RSM) 1.2 Electron microscopy Methods (SEM, EDX, TEM, STEM, EELS) 1.3 SIMS, RBS 2. Material characterization: electronic methods 2.1 van der Pauw techniquel2.2 Floating zone method 2.2 Hall effect 2.3 Cyclotron resonance spectroscopy 2.4. Quantum Hall effect 3. Material characterization: Optical methods 3.1 Absorption methods 3.2 Photoluminescence methods 3.3 FTIR, Raman spectroscopy 4. Semiconductor processing: lithography 4.1 Optical lithography methods 4.2 Electron beam lithography 4.3 FIB lithography 4.4 Scanning probe lithography 4.5 Direct growth methods (CEO, Nanowires) 5. Semiconductor processing: structuring of layers and devices 5.1 Wet etching methods 5.2 Dry etching methods (RIE, ICP, ion milling) 5.3 Physical vapor depositon methods (thermal, e-beam, sputtering) 5.4 Chemical vapor Deposition methods (PECVD, LPCVD, ALD) 5.5 Cleanroom basics & tour 6. Semiconductor devices 6.1 Semiconductor lasers 6.2 LED & detectors 6.3 Solar cells 6.4 Transistors (FET, HBT, HEMT) | ||||
Skript | https://moodle-app2.let.ethz.ch/course/view.php?id=10464 | ||||
Voraussetzungen / Besonderes | The "compulsory performance element" of this lecture is a short presentation of a research paper complementing the lecture topics. Several topics and corresponding papers will be offered on the moodle page of this lecture. |