402-0595-00L Semiconductor Nanostructures
Semester | Autumn Semester 2018 |
Lecturers | T. M. Ihn |
Periodicity | yearly recurring course |
Language of instruction | English |
Courses
Number | Title | Hours | Lecturers | |||||||
---|---|---|---|---|---|---|---|---|---|---|
402-0595-00 V | Semiconductor Nanostructures | 2 hrs |
| T. M. Ihn | ||||||
402-0595-00 U | Semiconductor Nanostructures or by appointment | 1 hrs |
| T. M. Ihn |
Catalogue data
Abstract | The course covers the foundations of semiconductor nanostructures, e.g., materials, band structures, bandgap engineering and doping, field-effect transistors. The physics of the quantum Hall effect and of common nanostructures based on two-dimensional electron gases will be discussed, i.e., quantum point contacts, Aharonov-Bohm rings and quantum dots. |
Learning objective | At the end of the lecture the student should understand four key phenomena of electron transport in semiconductor nanostructures: 1. The integer quantum Hall effect 2. Conductance quantization in quantum point contacts 3. the Aharonov-Bohm effect 4. Coulomb blockade in quantum dots |
Content | 1. Introduction and overview 2. Semiconductor crystals: Fabrication and band structures 3. k.p-theory, effective mass 4. Envelope functions and effective mass approximation, heterostructures and band engineering 5. Fabrication of semiconductor nanostructures 6. Elektrostatics and quantum mechanics of semiconductor nanostructures 7. Heterostructures and two-dimensional electron gases 8. Drude Transport 9. Electron transport in quantum point contacts; Landauer-Büttiker description 10. Ballistic transport experiments 11. Interference effects in Aharonov-Bohm rings 12. Electron in a magnetic field, Shubnikov-de Haas effect 13. Integer quantum Hall effect 14. Coulomb blockade and quantum dots |
Lecture notes | T. Ihn, Semiconductor Nanostructures, Quantum States and Electronic Transport, Oxford University Press, 2010. |
Literature | In addition to the lecture notes, the following supplementary books can be recommended: 1. J. H. Davies: The Physics of Low-Dimensional Semiconductors, Cambridge University Press (1998) 2. S. Datta: Electronic Transport in Mesoscopic Systems, Cambridge University Press (1997) 3. D. Ferry: Transport in Nanostructures, Cambridge University Press (1997) 4. T. M. Heinzel: Mesoscopic Electronics in Solid State Nanostructures: an Introduction, Wiley-VCH (2003) 5. Beenakker, van Houten: Quantum Transport in Semiconductor Nanostructures, in: Semiconductor Heterostructures and Nanostructures, Academic Press (1991) 6. Y. Imry: Introduction to Mesoscopic Physics, Oxford University Press (1997) |
Prerequisites / Notice | The lecture is suitable for all physics students beyond the bachelor of science degree. Basic knowledge of solid state physics is recommended. Very ambitioned students in the third year may be able to follow. The lecture can be chosen as part of the PhD-program. The course is taught in English. |
Performance assessment
Performance assessment information (valid until the course unit is held again) | |
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ECTS credits | 6 credits |
Examiners | T. M. Ihn |
Type | session examination |
Language of examination | English |
Repetition | The performance assessment is offered every session. Repetition possible without re-enrolling for the course unit. |
Mode of examination | oral 20 minutes |
Additional information on mode of examination | Obligatorisches Leistungselement: ein Vortrag über eine Publikation aus der Forschung, Termin nach Absprache während der Übung, Bewertung gemäss pass/fail. Es wird sehr empfohlen, die wöchentlichen Übungsaufgaben zu lösen. Prüfungssprache: Deutsch oder Englisch. Language of examination: English or German. |
This information can be updated until the beginning of the semester; information on the examination timetable is binding. |
Learning materials
Main link | Lecture Webpage |
Literature | T. Ihn, Semiconductor Nanostructures, Oxford University Press, 2010 |
Only public learning materials are listed. |
Groups
No information on groups available. |
Restrictions
There are no additional restrictions for the registration. |